Product Summary
- Optimised for Doherty solutions in split-band (70MHz to 100MHz)
- Extremely high power (P1dB 650W)
- Extremely high Doherty efficiency (>50%)
- Internal input matching for high gain
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Image | Part No | Mfg | Description | Pricing (USD) |
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BLF888B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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BLF888BS,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF pwr LDMOS transistor |
Data Sheet |
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