Product Summary

  • Optimised for Doherty solutions in split-band (70MHz to 100MHz)
  • Extremely high power (P1dB 650W)
  • Extremely high Doherty efficiency (>50%)
  • Internal input matching for high gain
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF888B,112
BLF888B,112

NXP Semiconductors

Transistors RF MOSFET Power UHF pwr LDMOS transistor

Data Sheet

0-45: $121.60
BLF888BS,112
BLF888BS,112

NXP Semiconductors

Transistors RF MOSFET Power UHF pwr LDMOS transistor

Data Sheet

0-45: $121.60