(China (Mainland))
Product Summary
FEATURES
? Low Noise Figure: 1.2B (Typ.)@f=12GHz
? High Associated Gain: 10.0dB (Typ.)@f=12GHz
? Lg ≤ 0.25μm, Wg = 280μm
? Gold Gate Metallization for High Reliability
? Cost Effective Ceramic Microstrip (SMT) Package
? Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FHX35LG/002 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FHX35LG/002 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FHX35X/002 |
Other |
|
Data Sheet |
Negotiable |
|
||||
