Product Summary

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications:

RF power amplifiers for W-CDMA base stations and multicarrier applications in the

2000 MHz to 2200 MHz frequency range

Application information:

Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 ?C; unless otherwise specified; in a
class-AB production test circuit.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF6G22-180PN
BLF6G22-180PN

NXP Semiconductors

Transistors RF MOSFET Power LDMOS TNS

Data Sheet

Negotiable 
BLF6G22-180PN,112
BLF6G22-180PN,112

NXP Semiconductors

Transistors RF MOSFET Power LDMOS TNS

Data Sheet

0-41: $67.09
41-100: $61.57
BLF6G22-180PN,135
BLF6G22-180PN,135

NXP Semiconductors

Transistors RF MOSFET Power Pwr LDMOS transistor

Data Sheet

0-63: $72.99