Product Summary
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications:
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Application information:
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 ?C; unless otherwise specified; in a
class-AB production test circuit.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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BLF6G22-180PN |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G22-180PN,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G22-180PN,135 |
NXP Semiconductors |
Transistors RF MOSFET Power Pwr LDMOS transistor |
Data Sheet |
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