(China (Mainland))
General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.
Product Summary
Features and benefits
- Advanced flange material for optimum thermal behavior and reliability
- Excellent ruggedness
- High power gain
- Designed for broadband operation (HF/VHF band)
- Source on underside eliminates DC isolators, reducing common-mode inductance
- Easy power control
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Pulsed applications up to 500 MHz
- Communication transmitter applications in the HF/VHF/UHF band
- Industrial applications up to 500 MHz
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF369 |
NXP Semiconductors (founded by Philips) |
TRANSISTOR RF LDMOS SOT800 |
Data Sheet |
Negotiable |
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 |
BLF369,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 65V 100A |
Data Sheet |
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