Product Summary
The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in
a low cost SOT89 surface mount package.
The device’s ideal operating point is at a drain bias of 8 V and 100 mA. At this bias at 900 MHz
when matched into 50 ohms using external components, this device is capable of 19 dB of gain,
28 dBm of saturated output power, and 40 dBm of output IP3.
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![]() TGF2960-SD-T/R |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-5.0GHz 0.5 Watt HFET |
![]() Data Sheet |
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![]() TGF2021-01 |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-12GHz 1mm Pwr pHEMT (0.35um) |
![]() Data Sheet |
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![]() TGF2021-04-SD T/R |
![]() TriQuint Semiconductor |
![]() Power Amplifiers DC-4GHz 5Volts |
![]() Data Sheet |
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![]() TGF2021-12 |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-12GHz 12mm Pwr pHEMT (0.35um) |
![]() Data Sheet |
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![]() TGF2022-06 |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-20GHz 0.6mm Pwr pHEMT (0.35um) |
![]() Data Sheet |
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![]() TGF2022-24 |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-20GHz 2.4mm Pwr pHEMT (0.35um) |
![]() Data Sheet |
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![]() TGF2022-48 |
![]() TriQuint Semiconductor |
![]() Transistors RF GaAs DC-20GHz 4.8mm Pwr pHEMT (0.35um) |
![]() Data Sheet |
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