Product Summary

These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
300 Watts CW Output Power
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Capable of 300 Watts CW Operation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRFE6VP6300HR3
MRFE6VP6300HR3
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 300W50VISM NI780H-4
Data Sheet
0-188: $38.89
MRFE6VP6300HR5
MRFE6VP6300HR5
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 300W50VISM NI780H-4
Data Sheet
0-1: $56.98
1-10: $51.04
10-25: $38.89
25-100: $37.72
MRFE6VP6300HSR5
MRFE6VP6300HSR5
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 300W50VISM NI780S-4
Data Sheet
0-1: $45.01
1-10: $43.64
10-25: $42.36
25-100: $38.93
MRFE6VP6300HSR3
MRFE6VP6300HSR3
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 300W50VISM NI780S-4
Data Sheet
0-188: $38.89