(China (Mainland))
Product Summary
FEATURES
· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123
flange envelope, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF175 |
Other |
|
Data Sheet |
Negotiable |
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 |
BLF175,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 30W HF-VHF |
Data Sheet |
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