Product Summary
4-V gate drive
Low drain?source ON-resistance : RDS (ON) = 33 mΩ (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = ?100 μA (max) (VDS = ?60 V)
Enhancement mode: Vth = ?0.8 to ?2.0 V (VDS = ?10 V, ID = ?1 mA)
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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2SJ349 |
Other |
Data Sheet |
Negotiable |
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2SJ349(F) |
Other |
Data Sheet |
Negotiable |
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2SJ349(F,T) |
Toshiba |
MOSFET MOSFET P-Ch 60V 20A Rdson 0.045 Ohm |
Data Sheet |
Negotiable |
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