Product Summary

4-V gate drive
Low drain?source ON-resistance : RDS (ON) = 33 mΩ (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = ?100 μA (max) (VDS = ?60 V)
Enhancement mode: Vth = ?0.8 to ?2.0 V (VDS = ?10 V, ID = ?1 mA)

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SJ349
2SJ349

Other


Data Sheet

Negotiable 
2SJ349(F)
2SJ349(F)

Other


Data Sheet

Negotiable 
2SJ349(F,T)
2SJ349(F,T)

Toshiba

MOSFET MOSFET P-Ch 60V 20A Rdson 0.045 Ohm

Data Sheet

Negotiable