(China (Mainland))
Product Summary
FEATURES
? High power gain
? Low noise figure
? Easy power control
? Good thermal stability
? Withstands full load mismatch
? Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BLF244 |
Other |
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Data Sheet |
Negotiable |
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BLF244,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 15W VHF |
Data Sheet |
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