Product Summary

The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.

Features

? High Output Power: P1dB = 44.5dBm (Typ.)
? High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
? High PAE: ηadd = 44% (Typ.)
? Proven Reliability
? Hermetically Sealed Package