Product Summary

DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
RD100HHF1
RD100HHF1

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
RD1006LN
RD1006LN

Other


Data Sheet

Negotiable 
RD1006LS
RD1006LS

Other


Data Sheet

Negotiable 
RD1006LS-SB5
RD1006LS-SB5

ON Semiconductor

Diodes (General Purpose, Power, Switching) SCHOTTKY BARRIER DIODE

Data Sheet

0-1: $1.01
1-25: $0.82
25-100: $0.74
100-500: $0.57
RD100FM
RD100FM

Other


Data Sheet

Negotiable 
RD100HHF1
RD100HHF1

Other


Data Sheet

Negotiable 
RD10A12-08-P6
RD10A12-08-P6

TE Connectivity

Standard Circular Connectors RD10A12-08-P6

Data Sheet

0-376: $33.42