Product Summary

Features
? 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
? Peak envelope power load power = 100 W
? Power gain = 21 dB
? Drain efficiency = 47 %
? Third order intermodulation distortion = ?35 dBc
? DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
? Average output power = 24 W
? Power gain = 22 dB
? Drain efficiency = 33 %
? Third order intermodulation distortion = ?34 dBc (4.3 MHz from center frequency)

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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BLF871
BLF871

NXP Semiconductors

Transistors RF MOSFET Power 100W, HF-1GHz

Data Sheet

Negotiable 
BLF871,112
BLF871,112

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Data Sheet

0-1: $77.47
1-25: $69.85
25-100: $67.57
BLF871S,112
BLF871S,112

NXP Semiconductors

Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS

Data Sheet

0-38: $81.29