(China (Mainland))
Product Summary
BLF246 APPLICATIONS
· Large signal amplifier applications in the VHF frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
Features
· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BLF246 |
Other |
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Data Sheet |
Negotiable |
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BLF246,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR VHF PWR DMOS |
Data Sheet |
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BLF246B,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 60W VHF P-P |
Data Sheet |
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