Product Summary
FEATURES
? Low Noise Figure: 1.2B (Typ.)@f=12GHz
? High Associated Gain: 10.0dB (Typ.)@f=12GHz
? Lg ≤ 0.25μm, Wg = 280μm
? Gold Gate Metallization for High Reliability
? Cost Effective Ceramic Microstrip (SMT) Package
? Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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![]() FHX35LG/002 |
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Image | Part No | Mfg | Description | ![]() |
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![]() FHX35LG/002 |
![]() Other |
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![]() Negotiable |
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![]() FHX35X/002 |
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![]() Data Sheet |
![]() Negotiable |
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