(China (Mainland))
Product Summary
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
? Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec,
Duty Cycle = 12%
Power Gain ó 18 dB
Drain Efficiency ó 60.5%
? Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
? Characterized with Series Equivalent Large--Signal Impedance Parameters
? Internally Matched for Ease of Use
? Qualified Up to a Maximum of 50 VDD Operation
? Integrated ESD Protection
? Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
? RoHS Compliant
? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MRF6V14300HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 1400MHZ 50V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
|
MRF607 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF616 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF627 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF630 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF6414 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF650 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
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