Product Summary
BLF6G10LS-160 160 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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BLF6G10LS-160 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G10LS-160 /T3 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G10LS-160RN,11 |
NXP Semiconductors |
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 39A 3-Pin |
Data Sheet |
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BLF6G10LS-160RN:11 |
NXP Semiconductors |
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 39A 3-Pin |
Data Sheet |
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BLF6G10LS-160,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G10LS-160,118 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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