Product Summary

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Large signal amplifier applications in the VHF frequency range

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF245,112
BLF245,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W VHF
Data Sheet
0-1: $22.26
1-25: $20.77
25-100: $19.28
100-250: $18.91
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF202
BLF202
Other

Data Sheet
Negotiable 
BLF202 T/R
BLF202 T/R
NXP Semiconductors
Transistors RF MOSFET Power TAPE-7 TNS-RFPR
Data Sheet
Negotiable 
BLF202,115
BLF202,115
NXP Semiconductors
Transistors RF MOSFET Power TAPE-7 TNS-RFPR
Data Sheet
0-346: $11.78
346-500: $11.21
BLF2022-120
BLF2022-120
Other

Data Sheet
Negotiable 
BLF2022-125
BLF2022-125
Other

Data Sheet
Negotiable 
BLF2022-30
BLF2022-30
Other

Data Sheet
Negotiable