Product Summary
Designed primarily for wideband large signal stages in the UHF frequency range.
Features
· Specified @ 12.5 V, 470 MHz Characteristics
· Output Power = 1.5 W
· Minimum Gain = 11 dB
· Efficiency 60% (Typ)
· Cost Effective PowerMacro Package
· Electroless Tin Plated Leads for Improved Solderability
Image | Part No | Mfg | Description | Pricing (USD) |
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MRF555 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Small Signal RF Transistor |
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MRF555T |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Small Signal RF Transistor |
Data Sheet |
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