Product Summary
FEATURES
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
APPLICATIONS
Designed for industrial and military
applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook ''''General'''' section for
further information.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BLF177,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W HF-VHF |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
BLF1043 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 10W UHF |
Data Sheet |
Negotiable |
|
|||||||||||
BLF1043,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 10W UHF |
Data Sheet |
|
|
|||||||||||
BLF1043,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS |
Data Sheet |
|
|
|||||||||||
BLF1046 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 45W UHF |
Data Sheet |
Negotiable |
|
|||||||||||
BLF1046,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 45W UHF |
Data Sheet |
|
|
|||||||||||
BLF1046,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS |
Data Sheet |
|
|