(China (Mainland))
Product Summary
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 RA08H1317M |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
RA08H1317M |
Other |
|
Data Sheet |
Negotiable |
|
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|
RA08N1317M |
Other |
|
Data Sheet |
Negotiable |
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