Product Summary
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances,resulting in high F transistors with high input impedance and high efficiency.SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTOR
| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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![]() SR401 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SR40150PT |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SR401A333FAR |
![]() |
![]() CAP CER 0.033UF 100V 1% RADIAL |
![]() Data Sheet |
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![]() |
![]() SR401A333GAR |
![]() |
![]() CAP CER 0.033UF 100V 2% RADIAL |
![]() Data Sheet |
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![]() |
![]() SR401A333JAA |
![]() |
![]() CAP CER 0.033UF 100V 5% RADIAL |
![]() Data Sheet |
![]()
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![]() |
![]() SR401A393JARTR1 |
![]() |
![]() CAP CER 0.039UF 100V 5% RADIAL |
![]() Data Sheet |
![]()
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![]() |
![]() SR401A473FART |
![]() |
![]() CAP CER 0.047UF 100V 1% RADIAL |
![]() Data Sheet |
![]()
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![]() |
![]() SR401A473JARTR1 |
![]() |
![]() CAP CER 0.047UF 100V 5% RADIAL |
![]() Data Sheet |
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(China (Mainland))









