Product Summary

RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout =
275 Watts Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain ó 20.3 dB
Drain Efficiency ó 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak
Power
Typical Broadband Performance: VDD = 50 Volts, IDQ = 100 mA, Pout =
250 Watts Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128 μsec, Duty Cycle = 10%
Power Gain ó 19.8 dB
Drain Efficiency ó 58%

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDDOperation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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