CGH40120F

CGH40120F,120 W, RF Power GaN HEMT,CREE
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Rated 5 Rating 5 | reviews | Write a review

Price:: US $280.00~290.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	290.00 / Piece
11 ~ 100 :	280.00 / Piece

PartNumber:: CGH40120F

Brand:: Cree, Inc. - Cree | D/C: 14+

Availability:: Supply Ability: 50/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Datasheet:: CGH40120F Datasheet download

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Products Upload time: 2016-11-21

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Part Number:CGH40120F
US $280.00 - 290.00
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piece

Product Summary

The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.

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