(China (Mainland))
Product Summary
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BLF8G22LS-270GV,12 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.1GHz 65V 17.7dB |
Data Sheet |
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BLF8G22LS-270V,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.1GHz 65V 17.7dB |
Data Sheet |
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BLF8G22LS-270V,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.1GHz 65V 17.7dB |
Data Sheet |
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