Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
Product Summary
Features and benefits
- High power gain
- Easy power control
- Excellent ruggedness
- Designed to withstand abrupt load mismatch errors
- Source on underside eliminates DC isolators; reducing common mode inductance
- BLF861A Designed for broadband operation (UHF band)
- Internal input and output matching
Applications
- Communication transmitter applications in the UHF frequency range
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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BLF861A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
BLF861A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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BLF871S,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS |
Data Sheet |
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BLF878 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
|
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BLF881,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF power LDMOS transistor |
Data Sheet |
|
|
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BLF8G20LS-200V,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 1.8-2GHz 65V 17.5dB |
Data Sheet |
|
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BLF888 |
NXP Semiconductors |
Transistors RF MOSFET Power 500W, 470-860MHz |
Data Sheet |
Negotiable |
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