Product Summary
The ATN3580-03 of attenuator chip incorporates thin-film resistors on high-resistivity silicon to achieve precision attenuation, tight flatness and excellent return loss to 40 GHz. The design of ATN3580-03 uses a balanced TEE resistive structure to assure broad bandwidth performance. The thin-film technology offers improved power-handling capability in comparison to the traditional thickfilm printed attenuator. All ATN3580-03 attenuator chips are specified for their attenuation at DC. A wafer probe sample test is performed to 40 GHz to assure the flatness specification.
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![]() ATN3580-03 |
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![]() ATTENUATOR PAD CHIP 1W 3DB |
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![]() ATN3580 |
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![]() ATN3580-01 |
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![]() ATTENUATOR PAD CHIP 1W 1DB |
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![]() ATN3580-02 |
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![]() ATTENUATOR PAD CHIP 1W 2DB |
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![]() ATN3580-03 |
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![]() ATTENUATOR PAD CHIP 1W 3DB |
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![]() ATN3580-04 |
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![]() ATTENUATOR PAD CHIP 1W 4DB |
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![]() ATN3580-05 |
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![]() ATTENUATOR PAD CHIP 1W 5DB |
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